An Experimental Investigation of the Formation of Thin Film Ni Silicide by Energy Dispersive X-Ray Spectroscopy and Scanning Electron Microscopy (SEM)

Abstract

The objective of this paper is to investigate the formation of metal nickel silicide, by energy dispersive x-ray spectroscopy (EDS) and scanning electron microscopy and X-ray diffraction. The bilayers of Ni and Si (with Ni on top) were deposited on physical vapor deposition (PVD) substrates at temperatures and  annealing from 200 to 500°C in steps of 100°C.

The composition profile of the reaction zone and the chemistry of the structure were investigated by scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDS). The XRD profiles shows the formation of structure Ni₃Si in the first and the rapidly transforms to monophase Ni silicides.